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bn:03599106n
Noun Named Entity
Categories: Emerging technologies, Computer memory, Non-volatile memory, Articles with short description, MOSFETs
EN
SONOS  Silicon-Oxide-Nitride-Oxide-Silicon
EN
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",: 121  is a cross sectional structure of MOSFET, realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. Wikipedia
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EN
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",: 121  is a cross sectional structure of MOSFET, realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. Wikipedia
Computer memory system Wikipedia Disambiguation
Silicon-Oxide-Nitride-Oxide-Silicon Computer Memory Wikidata
IS A
primary memory
Wikipedia
EN
SONOS
Wikidata
EN
SONOS
Wikidata Alias
EN
Silicon-Oxide-Nitride-Oxide-Silicon

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