bn:21443688n
Noun Named Entity
Categories: Semiconductor devices, MOSFETs, Indonesian inventions, Japanese inventions, Transistor types
EN
fin field-effect transistor  FinFET  3D transistor
EN
A fin field-effect transistor is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. Wikipedia
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EN
A fin field-effect transistor is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. Wikipedia
Type of transistor used in nanoelectronic integrated circuits Wikidata
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